| PART |
Description |
Maker |
| HER508 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| HER30105 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| HER20105 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| 10-FZ062TA015SM-P985D13 |
High-efficient rectifier
|
Vincotech
|
| EGC10DH EGC10GH EGC10MH |
High Efficient Rectifier
|
Zowie Technology Corporation
|
| HS1B HS1F |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| TBYV26C |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HS2KA |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HER154G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HER805G HER802G HER806G HER803G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HER251 |
HIGH EFFICIENT RECTIFIER DIODES
|
SynSemi, Inc.
|
